Antimatter research in Space

Two of the most compelling issues facing astrophysics and cosmology today are to understand the nature of the dark matter that pervades the universe and to understand the apparent absence of cosmological antimatter. For both issues, sensitive measurements of cosmic-ray antiprotons and positrons, in a wide energy range, are crucial. Many different mechanisms can contribute to antiprotons and positrons production, ranging from conventional reactions up to exotic processes like neutralino annihilation. The open problems are so fundamental (i.e.: is the universe symmetric in matter and antimatter ?) that experiments in this field will probably be of the greatest interest in the next years. Here we will summarize the present situation, showing the different hypothesis and models and the experimental measurements needed to lead to a more established scenario.Comment: 10 pages, 7 figures, Invited talk at the 18th European Cosmic Ray Symposium, Moscow, July 2002, submitted to Journal of Physics

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials

Fabrication and convergent X-ray nanobeam diffraction characterization of submicron-thickness SrTiO3 crystalline sheets

The creation of thin SrTiO3 crystals from (001)-oriented SrTiO3 bulk single crystals using focused ion beam milling techniques yields sheets with submicron thickness and arbitrary orientation within the (001) plane. Synchrotron x-ray nanodiffraction rocking curve widths of these SrTiO3 sheets are less than 0.02°, less than a factor of two larger than bulk SrTiO3, making these crystals suitable substrates for epitaxial thin film growth. The change in the rocking curve width is sufficiently small that we deduce that dislocations are not introduced into the SrTiO3 sheets. Observed lattice distortions are consistent with a low concentration of point defects